? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 250 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 100 na i dss v ds = v dss t j = 25c 50 a v gs = 0 v t j = 125c 2 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 33 m ? pulse test, t 300 ms, duty cycle d 2% features ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? international standard package ? fast switching times applications ? motor controls ? dc choppers ? switched-mode power supplies advantages ? easy to mount with one screw (isolated mounting screw hole) ? space savings ? high power density ds98953a(11/03) high current megamos tm fet n-channel enhancement mode symbol test conditions maximum ratings v dss t j = 25c to 150c 250 v v dgr t j = 25c to 150c; r gs = 1.0 m ? 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c mosfet chip capability 80 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c80a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque 0.7/6 nm/lb.in. weight to-264 10 g to-264 aa (ixtk) s g d d (tab) g = gate d = drain s = source tab = drain ixtk 80n25 v dss = 250 v i d25 = 80 a r ds(on) = 33m ? ? ? ? ? preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 56 s c iss 6000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1125 pf c rss 420 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 25 ns t d(off) r g = 1.0 ? (external) 88 ns t f 24 ns q g(on) 240 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 110 nc r thjc 0.23 k/w r thck 0.15 k/w source-drain diode ratings and characteristics (t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 80 a i sm repetitive; pulse width limited by t jm 320 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/s, v r = 100v 300 ns q rr 3.0 c ixtk 80n25 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505
? 2003 ixys all rights reserved ixtk 80n25 fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 200 012345678910 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 012345 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 00.5 11.5 22.5 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 80a i d = 40a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixtk 80n25 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 q g - nanocoulombs v g s - volts v ds = 125v i d = 40a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 44.5 55.566.5 77.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig . 12. for w ar d bias saf e operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 25s 1ms dc t c = 25oc r ds (on) limit
? 2003 ixys all rights reserved fig. 13. forw ard bias e d safe ope rating are a (fbsoa) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixtk 80n25
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